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| SEMICONDUCTOR TECHNICAL DATA MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES High DC Current Gain : hFE=200(Min.) (VCE=-2V, IC=-1A) P DEPTH:0.2 C KTB2234 EPITAXIAL PLANAR PNP TRANSISTOR B D A Low Saturation Voltage : VCE(sat)=-1.5V(Max.) (IC=-1A, IB=-1mA) Complementary to KTD2854. S Q K DIM A B C D E F G H J K L M N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4 G J F H M E F H M L R H MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Peak ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -100 -100 -8 -2 -3 -0.5 1 150 -55 150 UNIT V V V O N 1 2 3 N H 1. EMITTER 2. COLLECTOR 3. BASE 25 1.25 1.50 0.10 MAX _ 12.50 + 0.50 1.00 TO-92L A A W EQUIVALENT CIRCUIT COLLECTOR BASE - 4k - 800 D EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time ICBO IEBO ) TEST CONDITION VCB=-80V, IE=0 VEB=-8V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-1A(Pulse) IC=-1A, IB=-1mA(Pulse) IC=-1A, IB=-1mA(Pulse) VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz I B2 0 IB1 20s INPUT I B1 I B2 OUTPUT SYMBOL MIN. -100 2000 - TYP. 50 27 0.4 2.0 0.4 MAX. -10 -4 -1.5 -2.0 - UNIT A mA V V(BR)CEO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF 30 S DUTY CYCLE < 1% = -IB1 =IB2=1mA VCC =-30V 2001. 10. 23 Revision No : 0 1/3 KTB2234 I C - VCE -4 COLLECTOR CURRENT I C (A) COMMON EMITTER Ta=25 C -1000 A h FE - I C 10K DC CURRENT GAIN h FE A -800 -500A -400A -300A -3 3K = Ta 10 0 C -2 1K 500 300 C 25 a= T C -55 Ta= -1 -250A IB=-200A COMMON EMITTER 0 0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 -0.03 VCE =-2V -0.1 -0.3 - 1 -3 -10 COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -5 -3 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COMMON EMITTER IC /I B =1000 V BE(sat) - I C -5 -3 COMMON EMITTER IC /I B =1000 Ta=-55 C Ta=25 C 0 Ta=10 C -1 Ta=25 C Ta=-55 C C Ta=100 -1 -0.5 -0.3 -0.2 -0.5 -0.3 -0.3 -0.5 -1 -3 -0.2 -0.3 -0.5 -1 -3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - V BE COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =-2V Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) -2.0 -2.4 -3.0 1200 1000 800 600 400 200 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) -3.0 -2.5 -2.0 100 5C -1.5 -1.0 -0.5 0 C 0 -0.4 -0.8 -1.2 -1.6 BASE-EMITTER VOLTAGE V BE (V) 2001. 10. 23 Revision No : 0 Ta=-55 Ta=2 Ta= C 2/3 KTB2234 SAFE OPERATING AREA -5 -3 COLLECTOR CURRENT I C (A) I C MAX(PULSED) s 100 1m 10m -1 -0.5 -0.3 s s V CEO (MAX) SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -0.05 -0.03 -0.5 -1 -3 -10 -30 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 10. 23 Revision No : 0 3/3 |
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